Belépés címtáras azonosítással
magyar nyelvű adatlap
angol nyelvű adatlap
A tantárgy neve magyarul / Name of the subject in Hungarian: Félvezető technológia
Last updated: 2016. november 24.
Dr. János Mizsei
Department of Electron Devices
Dr. Imre Zólomy
Dr. Balázs Plesz
A fenti forma a Neptun sajátja, ezen technikai okokból nem változtattunk.
A kötelező előtanulmányi rendek grafikus formában itt láthatók.
Granted signature of Microelectronics
The aim of this subject is to give and overview of industrial semiconductor processing technologies from the perspective of applications and manufacturing as well. The knowledge of the inner structure of integrated circuits help in choosing the appropriate components for a given task, while knowledge of the processing steps helps in the definition of the development requested from the component manufacturer.
Introduction, short overview: from quartz to microprocessor. Overview of bipolar monolithic processing steps.
Practice: Doping, resistivity, potentials in various structures realized using semiconductor processing steps.
Variety of devices and circuits realized with semiconductor processing technologies
Practice: Orders of magnitude, concentration and sizes-relations in monolithic IC technology
Overview of monolithic MOS IC technology, CMOS and BiCMOS circuits.
Discrete bipolar and MOS devices, power devices, IGBT.
Manufacturing and characterization of monocrystalline Si (the raw material of IC manufacturing).
Analog and digital integrated circuits.
Silicon dioxide (SiO2): properties, processing steps and its importance in semiconductor processing. Characterization of the SiO2 and C-V methods.
Pratice: Evaluation of C-V curves (calculation of doping, surface and interface properties from the C-V curves and p-n junctions and MOS curves).
Doping of Si: diffusion. Mathematical models of diffusion.
Practice: Modelling random walk (diffusion) with transition-probability matrix.
Doping of Si: ion implantation.
Processors (catalogue IC, ASIC and FPGA circuits).
Doping of Si: ion implantation (continued).
Memories (ROM, PROM, EPROM, SRAM, DRAM)
Deposition processes: evaporation and sputtering.
processes and epitaxy.
Wet and dry chemical etching processes.
Metallization and forming of wiring network. Metal-semiconductor contacts. Damascene technology. Assembly and packaging related processes.
Effects and challenges of scale-down on manufacturing processes
Mask/reticle preparation and photolithography in sub-micron structures.
Processing technologies of devices of ambient intelligence and smart systems. Sensors and transduction techniques. Self-powered sensors: possibilities of energy harvesting.
Principles of device arrangement in VLSI circuits.
Introduction of MEMS. Realization of sensors and actuators.
Practice: IC and MEMS layout and structure evaluation.
The lectures accompanied by classroom practices (2 hours in every second week).
3 hours/week lectures and 1 hour/week classroom practices (including laboratory demonstrations) with practical examples and case studies. The purpose of the classroom practices is help to deepen the knowledge of the field and to demonstrate the most important related calculation methods.
a. During the term: one mid-term test (the results influences the rounding of the mark given on the exam)Requirement for granting the signature: >= 2 (satisfactory) test and visiting 70% of the lectures AND classroom practices (verified).
b. In the exam period: written exam.
c. Exam before the examination period: possible.
On mid-term test If a student fails to turn up at mid-term test, it can be repeated during the term. Failed mid-term test can be repeated in the repeat period only once.
Dr. László Juhász