Budapest University of Technology and Economics, Faculty of Electrical Engineering and Informatics

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    Semiconductor Processing

    A tantárgy neve magyarul / Name of the subject in Hungarian: Félvezető technológia

    Last updated: 2016. november 24.

    Budapest University of Technology and Economics
    Faculty of Electrical Engineering and Informatics
    Branch of Electrical Engineering
    BSc
    Microelectronics and Electronics Technology specialization
    Course ID Semester Assessment Credit Tantárgyfélév
    VIEEAC02 5 2/1/0/v 4  
    3. Course coordinator and department Dr. Plesz Balázs,
    4. Instructors

    Name:

    Affiliation:

    Department, institute:

    Dr. János Mizsei

    Professor

    Department of Electron Devices

    Dr. Imre Zólomy

    Professor emeritus

    Department of Electron Devices

    Dr. Balázs Plesz

    Assistant professor

    Department of Electron Devices

    5. Required knowledge Microelectronics
    6. Pre-requisites
    Kötelező:
    ((Szakirany("AVINmikrogyart", _) VAGY
    Szakirany("AVINmikroterv", _) VAGY
    Szakirany("AVImikro", _) )

    VAGY Training.code=("5NAA7") )

    ÉS NEM ( TárgyEredmény( "BMEVIEEA329" , "jegy" , _ ) >= 2
    VAGY
    TárgyEredmény("BMEVIEEA329", "FELVETEL", AktualisFelev()) > 0)

    A fenti forma a Neptun sajátja, ezen technikai okokból nem változtattunk.

    A kötelező előtanulmányi rendek grafikus formában itt láthatók.

    Ajánlott:

    Granted signature of Microelectronics

    7. Objectives, learning outcomes and obtained knowledge

    The aim of this subject is to give and overview of industrial semiconductor processing technologies from the perspective of applications and manufacturing as well. The knowledge of the inner structure of integrated circuits help in choosing the appropriate components for a given task, while knowledge of the processing steps helps in the definition of the development requested from the component manufacturer.

    8. Synopsis

    Lecture topics:

    Week 1

    Introduction, short overview: from quartz to microprocessor. Overview of bipolar monolithic processing steps.

    Practice: Doping, resistivity, potentials in various structures realized using semiconductor processing steps.

    Week 2

    Variety of devices and circuits realized with semiconductor processing technologies

    Practice: Orders of magnitude, concentration and sizes-relations in monolithic IC technology

    Week 3

    Overview of monolithic MOS IC technology, CMOS and BiCMOS circuits.

    Discrete bipolar and MOS devices, power devices, IGBT.

    Week 4

    Manufacturing and characterization of monocrystalline Si (the raw material of IC manufacturing).

    Analog and digital integrated circuits.

    Week 5

    Silicon dioxide (SiO2): properties, processing steps and its importance in semiconductor processing. Characterization of the SiO2 and C-V methods. 

    Pratice: Evaluation of C-V curves (calculation of doping, surface and interface properties from the C-V curves and p-n junctions and MOS curves).

    Week 6

    Doping of Si: diffusion. Mathematical models of diffusion.

    Practice: Modelling random walk (diffusion) with transition-probability matrix.

    Week 7

    Doping of Si: ion implantation.

    Processors (catalogue IC, ASIC and FPGA circuits).

    Week 8

    Doping of Si: ion implantation (continued).

    Memories (ROM, PROM, EPROM, SRAM, DRAM)

    Week 9

    Deposition processes: evaporation and sputtering.

    CVD processes and epitaxy.

    Week 10

    Wet and dry chemical etching processes.

    Plasma technologies.

    Week 11

    Metallization and forming of wiring network. Metal-semiconductor contacts. Damascene technology. Assembly and packaging related processes.

    Week 12

    Effects and challenges of scale-down on manufacturing processes

    Mask/reticle preparation and photolithography in sub-micron structures.

    Week 13

    Processing technologies of devices of ambient intelligence and smart systems. Sensors and transduction techniques. Self-powered sensors: possibilities of energy harvesting.

    Principles of device arrangement in VLSI circuits.

    Week 14

    Introduction of MEMS. Realization of sensors and actuators.

    Practice: IC and MEMS layout and structure evaluation.

    The lectures accompanied by classroom practices (2 hours in every second week).

    9. Method of instruction

    3 hours/week lectures and 1 hour/week classroom practices (including laboratory demonstrations) with practical examples and case studies. The purpose of the classroom practices is help to deepen the knowledge of the field and to demonstrate the most important related calculation methods.

    10. Assessment

    a. During the term: one mid-term test (the results influences the rounding of the mark given on the exam)
    Requirement for granting the signature: >= 2 (satisfactory) test and visiting 70% of the lectures AND classroom practices (verified).

    b. In the exam period: written exam.

    c. Exam before the examination period: possible.

    11. Recaps

    On mid-term test If a student fails to turn up at mid-term test, it can be repeated during the term. Failed mid-term test can be repeated in the repeat period only once.

    12. Consultations By appointment (via e-mail) with the instructors.
    13. References, textbooks and resources Electronic tutorials accessible through the department's e-learning website.
    14. Required learning hours and assignment
    Classes56
    Preparation for classes
    14
    Preparation for test
    8
    Homework0
    Learning prescribed materials 10
    Preparation for exam
    32
    Sum120
    15. Syllabus prepared by

    Name:

    Affiliation:

    Department, institute:

    Dr. János Mizsei

    Professor

    Department of Electron Devices

    Dr. Imre Zólomy

    Professor emeritus

    Department of Electron Devices

    Dr. László Juhász

    Assistant professor

    Department of Electron Devices