Budapest University of Technology and Economics, Faculty of Electrical Engineering and Informatics

    címtáras azonosítással

    vissza a tantárgylistához   nyomtatható verzió    


    A tantárgy neve magyarul / Name of the subject in Hungarian: Mikroelektronika

    Last updated: 2012. március 27.

    Tantárgy lejárati dátuma: 2020. január 31.

    Budapest University of Technology and Economics
    Faculty of Electrical Engineering and Informatics
    Electrical Engineering B.Sc.
    Course ID Semester Assessment Credit Tantárgyfélév
    VIEEA306 5 3/0/1/f 5  
    3. Course coordinator and department Dr. Poppe András,
    4. Instructors






    András Poppe, PhD




    assoc. prof.


    Department of Electron Devices


    György Bognár, PhD


    (lab sessions)


    assoc. prof.


    Department of Electron Devices


    5. Required knowledge Electronics 1-2, Digital technique 1, Physics C2, Electronics Technology, Materials science


    6. Pre-requisites
    (TárgyEredmény( "BMEVIHIA205" , "aláírás" , _ ) = -1
    TárgyEredmény( "BMEVIHI3020" , "aláírás" , _ ) = -1
    TárgyEredmény( ahol a TárgyKód = "BMEVIDHKV05", ahol a Típus = "JEGY", ahol a Ciklus = tetszőleges, ahol a KépzésKód = tetszőleges) >=2
    KépzésLétezik( ahol a KépzésKód = "5N-07")
    Szakirány( ahol a SzakirányKód = "KIEGVBSC", ahol a Ciklus = "2007/08/1") )

    ÉS NEM ( TárgyEredmény( "BMEVIEEAB00" , "jegy" , _ ) >= 2
    TárgyEredmény("BMEVIEEAB00", "FELVETEL", AktualisFelev()) > 0)

    ÉS Training.Code=("5N-A7")

    A fenti forma a Neptun sajátja, ezen technikai okokból nem változtattunk.

    A kötelező előtanulmányi rendek grafikus formában itt láthatók.

    Neptun-code  Title


    BMEVIHIA205        Electronics 1      completed with setisfactory result




    BMEVIHI3020         Electronics 2      completed with setisfactory result


    7. Objectives, learning outcomes and obtained knowledge Electronics and informatics is based on integrated circuits. Every electrical engineer has to be aware of the basics of the construction and operation of ICs.  Knowledge about the elementary procedures of design of integrated circuits is also a must. We also aim to show the students the link between system level circuit design and the realization of the circuits.


    The objective of our subject is to provide knowledge in the above mentioned fields. Special epmphasis is put on related practical skills. This is achieved by solving different problems by means of numerical calculations, analysing cases studies. Cumpeter laboratory excercises, during which different steps of IC design flowas are introduced, also support this


    An essential target of the subject is to highlight the relationship between the abstract electronic function and the actual physical operation. Therefore the physical operation of components of ICs (diodes, transistors) is discussed in details. Physics and operation of MEMS and MOEMS devises are also discussed. Finally the subject provides an outlook to development trends – photonics and nanoelectronics.


    The subject Microelectronics is the last element of the string of subjects, starting with Electronics 1 and 2. and spanning over three semesters.
    8. Synopsis Course material available at Further resources available in the educational portal of the Department (


    Introduction, IC manufacturing processes, basic terms of art. Development trends (Moore’s law). Basic steps of microelectronics technologies: layer deposition, patterning, doping.


    The manufacturing process at the department’s clean-room facility. Basics of semiconductor physics: band structure, generation and recombination, carrier concentrations in intrinsic and doped semiconductor materials. Mass-action law. Currents in semiconductors (drift, diffusion). Einstein’s relationship.


    Lab#1 – visit to the clean-room facility, investigating IC-s through optical microscope  


    The pn junction – how it works? Basic poroperties. Real diodes and the ’internal junction’. Diode characteristics (farward, reverse), secondary effects (series resistance, generation current, recombination current, brakedown phenomena). DC operating point. DC model of diodes.


    Dynamic properties of diodes. Temperaure dependence.


    Lab#2 – thermal simulation of electronic systems


    The bipolar transistor (structure, operation). Amplification. Currents in a BJT.


    The built-in electric field in a BJT. Injection and transport efficiency. Different modes of operation of a BJT, Ebers-Moll model


    Bipoláris tranzisztor beépített tér számítása, Injektálási és transzport hatásfok, A tranzisztor üzemmódjai, Ebers-Moll modell


    Lab#3 – Circuit simulation with a SPICE-like program


    Characteristics of an ideal BJT (in common base and common emitter setups). Characteristics of real BJT-s, secondary effects (parasitic CB diode, series resistances, Early-effect, base-width modulation.


    Set of IC components available in a bipolar process (resistors with base diffusion, with base and emitter diffusion, PNP transistors, thin-film capacitor). Layout of a classical OpAmp.


    Lab#4 – Verilog simulation


    Thermal phenomena in case of analog IC-s. Thermal impedances, thermal feedback. How layout affects the circuit operation through thermal effects. Thermally optimized layout of a bipolar OpAmp.


    Small signal models of BJT-s, high frequency operation.


    Field effect transistors. Operation and chacateristics of JFETs. The pinch-off voltage.


    Operation of MOSFETs, the phiscal basics (the MOS capacitance, energy, charge and potential distributions at the semiconductor-dielectric interface, the threshold voltage). The device characteristics, some secondary effects (short/narrow channel effects, temperature dependence, subthreshold currents)


    Lab#5 - Digital IC design and FPGA design (Verilog synthesis)


    MOS inverters – major properties and characteristics


    MOS and CMOS circuits: design and construction. Power consumption of CMOS digital circuits. Steps of the most basic self-aligned poli-Si gate MOS process. Layout and cross section of a CMOS inverter.


    Integrated circuits: major properties; manufacturing and design; cost factors.


    Overview of IC design tools. Design flows. Design rules. Standard cell design. MPW manufacturing. Design of digital circuits for FPGA realization. SoC. HDLs (VHDL, Verilog, System-C). Hardware-software co-design.


    Issues of IC packaging. Thermal properties of IC packages. Testing of ICs. Scan designs. The boundary scan.


    Typical VLSI circuits: memories, AD/DA converters.


    MEMS devices and issues of MEMS design.


    Special semiconductors such as LEDs, CCD arrays. Examples for organic semiconductor devices: OLEDs.


    Last lab  – recap option for one lab session


    9. Method of instruction 3 hours/week lectures and 2 hour/2weeks laboratory exercise.
    10. Assessment a.     In the class period: two midterm tests, small tests at every laboratory exercise


              Requirement for the signature: final mark >= 2 (setisfactory).


            Final mark is based on the lumped results of the two mid-term tests (80% weight) and   perrformance during the lab sessions (20% weight).


            Threshold for setisfactory results: minimum 40% of the maximal score.


    b.     In the examination period: n.a.


    c.      Exam before the examination period: n.a.


    11. Recaps One out of the two midterm tests, one laboratory excercise


    12. Consultations By appointment.


    13. References, textbooks and resources handouts
    14. Required learning hours and assignment
    Preparation for classes20
    Preparation for test20
    Learning of prescribed matters10
    Preparation for lab sessions14
    15. Syllabus prepared by






    Vladimír Székely, DSci




    Department of Electron Devices


    András Poppe, PhD


    assoc. prof.


    Department of Electron Devices