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    Microelectronics

    A tantárgy neve magyarul / Name of the subject in Hungarian: Mikroelektronika

    Last updated: 2017. március 13.

    Budapest University of Technology and Economics
    Faculty of Electrical Engineering and Informatics

    Major in Electrical Engineering

    BSc

    Course ID Semester Assessment Credit Tantárgyfélév
    VIEEAB00 4 2/0/2/v 5  
    3. Course coordinator and department Dr. Poppe András,
    4. Instructors

    Név:

    Beosztás:

    Tanszék, Int.:

    Dr. Poppe András

    associate professor

    Department of Electron Devices

    Dr. Bognár György

    associate professor

    Department of Electron Devices

    Dr. Szabó Péter Gábor

    associate professor

    Department of Electron Devices

    5. Required knowledge Electronics 1, Digital technics 1, Digital technics 2, Phisics 2, Elektronika 1, Digitális technika 1, Digitális technika 2, Fizika 2, Electronics Technology and Materials
    6. Pre-requisites
    Kötelező:
    ( ((TárgyEredmény( "BMEVIHVAB01" , "aláírás" , _ ) = -1 VAGY
    TárgyEredmény( "BMEVIHVAB02" , "aláírás" , _ ) = -1
    VAGY TárgyEredmény( "BMEVIHVA200" , "aláírás" , _ ) = -1 )
    ÉS (StudentTraining.Startingdate >= Datum(2014, 8, 20)
    VAGY EgyenCsoportTagja("VILLBSc 2passz miatt új 14-es tantervre")) )

    VAGY
    ((TárgyEredmény( "BMEVIHIA205" , "aláírás" , _ ) = -1
    VAGY TárgyEredmény( "BMEVIHIAB02" , "aláírás" , _ ) = -1 )
    ÉS EgyenCsoportTagja("VILL régi tanterv") ) )

    ÉS NEM ( TárgyEredmény( "BMEVIEEA306" , "jegy" , _ ) >= 2
    VAGY
    TárgyEredmény("BMEVIEEA306", "FELVETEL", AktualisFelev()) > 0)

    ÉS (Training.Code=("5N-A7") VAGY Training.Code=("5N-A7H") VAGY Training.Code=("5NAA7"))

    A fenti forma a Neptun sajátja, ezen technikai okokból nem változtattunk.

    A kötelező előtanulmányi rend az adott szak honlapján és képzési programjában található.

    Ajánlott:
    Recommended: Signature in Electronics I.
    7. Objectives, learning outcomes and obtained knowledge

    The basic goal of the course is to deepen the already acquired knowledge in the field of digital electronics through presenting the latest implementation techniques of digital integrated circuits. Further goals of the subject is to provide information on the basics of analogue integrated circuits, components of power electronics and solid-state lightning.

    Today’s electronics and IT devices are all based on different special discrete semiconductors and complex integrated circuits. Solid knowledge regarding the structure, operation and manufacturing of these devices is among the necessary skills of today’s electrical engineers including basics of IC design at least on the level, which allows effective communication with IC design specialists. They have to know how system level design connects with the IC design as well.

    Special emphasis is put on the corresponding practical skills through simple case studies (calculation examples) as well as computer laboratory practices where the students are acquainted with the basic steps IC design.

    An important aspect of the course is to bridge the gap between the operation of abstract electronics components and the physical reality: the major components used in ICs (diodes, transistors, etc.) are discussed in detail. A detour is made towards the MEMS and MOEMS, where electrical operation is combined with mechanical and optical effects.

    8. Synopsis
    Week 1 Review of microelectronics as one of the fastest evolving industry. The Moore’s law, international technology roadmap, barriers of evolution. Characteristics of micorelectronics manufacturing technology: deposition, doping, patterning (photolitography, etching). The concept of layout and mask. The concept of clean room. How does an IC fab look like? Basics of semiconductor physics: energy bands, charge carriers in intrinsic and doped semiconductors, generation and recombination. Currents in semiconductors, temperature dependency.
    Week 2 The diode as the most simple semiconductor device. Electrostatic conditions in the pn junction, depleted region. Forward characteristics of the pn junction. Generation and recombination current, high current density phenomena. Concept of small signal operation, differential resistance of the pn junction.
    Week 3 Space charge and diffusion capacitance. Reverse recovery. Modelling of diodes for circuit simulations (SPICE): model topology, model equations, model parameters. Small and high current diodes, LEDs, organic LEDs, non-electrical parameters of LEDs. Photodiodes and solar cells. Temperature dependency of pn junction.
    Week 4 Structure and operation of bipolar transistor, efficiency, large signal current amplification factors. Considering secondary effects. Modelling for SPICE like circuit simulators. Small signal models. Discrete and integrated bipolar transistors. Role of bipolar transistors in todays integrated circuits (e.g. BiCMOS circuits).
    Week 5 Process steps and mask sets of an IC fabrication, inventory of the realizable circuit components. Rules of creating identical components. Case study: layout of an operation amplifier. Circuit symmetry and thermal effects. Significance of electro-thermal circuit simulation.
    Week 6 Types of field effect transistors: JFET, MOSFETs. Physical principles and fundamentals of unipolar operation. Family of field effect transistors.
    Week 7 Properties of the MOS structure. Accumulation, depletion, inversion, threshold voltage. Characteristics of the MOST transistor. Minimal feature size. Deviation from the quadratic characteristics. Sub-threshold voltage. Capacities. SPICE simulation model of MOS transistors (topology, parameters). Process steps of the simplest MOS fabrication process, mask sets.
    Week 8 Digital nMOS gates (circuit, layout). Concept of dual circuit, digital CMOS gates. Timing parameters, loading capacitances, properties of IC wirings: multi-layer metallization structures. Structure and properties of the CMOS inverter (signal propagation, consumption, sub-threshold current). CMOS gates, flip-flops. Power consumption, overheating of digital CMOS circuits and their investigation.
    Dynamic MOS circuits, transfer gates. Rail drivers, tri-state drivers. Input-output circuits and their protection. Standard cells. Design process of digital circuits through a standard cell design example.
    Week 9 Methods of IC design, concepts of the design flow. Design of large units in HDL (VHDL, Verilog, SystemC), concept of software/hardware co-design. IC design suites. System level design, floorplaning.
    Week 10 Concept of the IP. Ordering from IP and layout agencies. Cooperation of design teams. Embedded systems. Role of the simulation in the development from the cell to the system level. Types and roles of simulation programs (circuits, logical, RTL, behavioral, physical). Different cost factors of IC design and fabrication. Choosing the optimal realization method. MPW fabrication: IC fabrication as a service (fabless design).
    Week 11 Testing of VLSI circuits. Design for testability. Concept of test mode and scan path. Built in self test and its circuitry. Boundary scan method. Generating test sequences in the design process.
    Week 12 Semiconductor memories. Structure of a DRAM cell. Structure and operation of ROM, EPROM and EEPROM memories. CMOS static RAM.
    Week 13 Packaging of VLSI ICs. Modern (More than Moore) technics: stacked chips, 3D packaging. Chip on board, system in package. Thermal characteristics and measurement of packaged semiconductor devices (thermal resistance, thermal capacitance), description of the heat flow path by structure function.
    Week 14 Non-electrical components on an IC substrate: integrated microsystems. Typical structures: cantilever, bridge, membrane. Capacitive sensing and moving. Piezo resistive sensing. Application fields. Temperature-, pressure-, acceleration- and gas sensors. Combined micromechanical-optical systems. Smart sensors, sensor networks. Outlook: what does the future holds? What is nanoelectronics?
    Week 15
    The subject includes laboratory practices (2 hour/week). 
    The aim of the laboratory exercises is to transfer the practical knowledge of applied computer aided design and verification methods in microelectronics by solving specific tasks. These tasks are the followings:
    Familiarizing with the clean room and with the manufacturing processes
    Measurement of semiconductor materials, needle measurement, capacitive measurement, pn junction
    SPICE circuit simulation based on their schematic, determination of main operational properties through simulations
    Thermal simulation of electronic systems, circuits, IC substrates: layout design, determination of the effect of the packaging and different cooling solutions
    Design of a complex digitals circuit in HDL, verification, synthesis and implementation in a real FPGA environment
    Simple circuit measurement exercise (e.g. investigation of the effect of temperature increase)

    9. Method of instruction

    The theory of the subject is lectured in 3 hours/week. The presentation materials is continuously illustrated by showing images of microelectronical structures (microscopic, electro-microscopic), on the fly measurements and modells.

    Some characteristics calculation tasks are illustrated by examples during the class. The design and simulation practices are held in computer labs. During these sessions, the students need to solve individual tasks.

    The lab exercises are mandatory. The presence is verified every time. Two recaps are available.
    10. Assessment

    In the lecturing period, the conditions of the signature and Semester mark are the following:

    • Accomplishment of the laboratory practices (this is controlled in each occasion, each task has to be accomplished at least on fair level. 
    • Achieving minimum fair level at one of the tests

    In the exam period:

    ·       Achieving minimum fair level in the written exam.

    11. Recaps

    Two laboratory practice can be repeated on the repetition occasion during the Semester. The mid-term can be repeated once during the study period and once in the retake period. If the mandatory presence requirement during classroom and computer room practices was satisfied and the student also completed the requirements for the small tests.

    12. Consultations

    If requested consultations are hold for small groups.

    13. References, textbooks and resources

    ·       Székely V.: Elektronika I. Félvezető eszközök, Műegyetemi Kiadó, 55054

    ·       S. M. Sze - Physics of Semiconductor Devices, Wiley-Interscience, 1969

    ·       Adel S. Sedra, Kenneth C. Smith - Microelectronic circuits, Oxford University Press 2004

    ·       Dr. Mojzes Imre (szerk.): Mikroelektronika és elektronikai technológia (2. kiadás)

    ·       Downloadable electronics slideshow

    14. Required learning hours and assignment

    Classes

    70

    Preparation for classes

    25

    Preparation for test

    25

    Learning the prescribed matters

    15

    Homework

     

    Preparation for laboratories

    15

    Sum

    150

    15. Syllabus prepared by

    Név:

    Beosztás:

    Tanszék, Int.:

    Dr. Poppe András

    egyetemi docens

    Elektronikus Eszközök Tanszéke

    Dr. Bognár György

    egyetemi docens

    Elektronikus Eszközök Tanszéke

    Dr. Rencz Márta

    egyetemi tanár

    Elektronikus Eszközök Tanszéke